Part Number Hot Search : 
01460 D74LVC16 1048056 225102 AD7849 CX1624 EJ643S16 C2000
Product Description
Full Text Search
 

To Download DMN3112SSS-13 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 DMN3112SSS
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
Please click here to visit our online spice models database.
Features
* Low On-Resistance * 57m @ VGS = 10V * 112m @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
* * * * * * * *
SOP-8L
NEW PRODUCT
* * * * * * *
Case: SOP-8L Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.072g (approximate)
S S S G
TOP VIEW Internal Schematic
D D D D
TOP VIEW
Maximum Ratings
Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 3)
@TA = 25C unless otherwise specified Characteristic Symbol VDSS VGSS Steady State TA = 25C TA = 70C ID IDM Value 30 20 6 4.5 24 Units V V A A
Thermal Characteristics
Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Symbol PD RJA TJ, TSTG Value 2.5 50 -55 to +150 Unit W C/W C
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
Notes: 1. 2. 3. 4. 5.
@TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) gfs VSD Ciss Coss Crss Min 30 1 0.5 Typ 43 83 2.8 0.8 268 73 50 Max 800 80 800 2.2 57 112 1.2 Unit V nA nA V m S V pF pF pF Test Condition VGS = 0V, ID = 250A VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS = 25V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 5.8A VGS = 4.5V, ID = 3.7A VDS = 10V, ID = 3.7A VGS = 0V, IS = 2.1A VDS = 15V, VGS = 0V f = 1.0MHz
Device mounted on 2 oz copper pad layout with RJA = 50C/W. No purposefully added lead. Pulse width 10S, Duty Cycle 1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect.
DMN3112SSS
Document number: DS31582 Rev. 1 - 2
1 of 4 www.diodes.com
October 2008
(c) Diodes Incorporated
DMN3112SSS
10
10
8 ID, DRAIN CURRENT (A)
VGS = 10V
8
VGS = 4.0V
NEW PRODUCT
6
ID, DRAIN CURRENT (A)
VGS = 4.5V
6
4
VGS = 3.5V
4
TA = 150C
2
VGS = 3.0V VGS = 2.5V
2
TA = 125C
TA = 85C TA = 25C TA = -55C
0
0
0
0.5
1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic
5
1
2 3 4 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic
5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
1
0.32 0.28 0.24
T A = 150C VGS = 4.5V
0.20 0.16 0.12
TA = 125C T A = 85C
0.1
VGS = 4.5V
VGS = 10V
TA = 25C
0.08 0.04 0 0 2
TA = -55C
0.01 0 4 8 12 16 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 20
4 6 8 ID, DRAIN CURRENT (A)
10
Fig. 4 Typical On-Resistance vs. Drain Current and Temperature
RDSON, DRAIN-SOURCE ON-RESISTANCE ()
1.6 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)
0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 -50
VGS = 10V ID = 10A VGS = 4.5V ID = 5A
1.4
VGS = 10V ID = 10A
1.2
VGS = 4.5V ID = 5A
1.0
0.8
0.6 -50
-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C)
Fig. 5 On-Resistance Variation with Temperature
-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature
DMN3112SSS
Document number: DS31582 Rev. 1 - 2
2 of 4 www.diodes.com
October 2008
(c) Diodes Incorporated
DMN3112SSS
2.4 VGS(TH), GATE THRESHOLD VOLTAGE (V)
ID = 1mA
10
2.0
ID = 250A
8 IS, SOURCE CURRENT (A)
TA = 25C
1.6
NEW PRODUCT
6
1.2
4
0.8
0.4
2
0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature
1,000
0 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2
C, CAPACITANCE (pF)
Ciss
100
Coss Crss
10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 1 r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7 D = 0.5 D = 0.3
30
0.1
D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 168C/W P(pk)
D = 0.02
0.01
D = 0.01 D = 0.005
t1
D = Single Pulse
t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1/t2
0.001 0.00001
0.0001
0.001
0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 10 Transient Thermal Response
10
100
1,000
DMN3112SSS
Document number: DS31582 Rev. 1 - 2
3 of 4 www.diodes.com
October 2008
(c) Diodes Incorporated
DMN3112SSS Ordering Information
Part Number DMN3112SSS-13
Notes:
(Note 6) Case SOP-8L Packaging 2500/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information NEW PRODUCT
Top View
8 5
Logo
N3112SS YY WW
Part no.
1
4
Xth week: 01~52 Year : "07" = 2007 "08" = 2008
Package Outline Dimensions
SOP-8L Dim Min Max A 1.75 A1 0.08 0.25 A2 1.40 1.50 A3 0.20 Typ b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.80 3.90 e 1.27 Typ h 0.35 L 0.60 0.80 0 8 All Dimensions in mm
E1 E A1 L
0.254
Gauge Plane Seating Plane
Detail `A'
h 45 A2 A A3 e D b 7~9
Detail `A'
Suggested Pad Layout
X
C1 C2 Y
Dimensions X Y C1 C2
Value (in mm) 0.60 1.55 5.4 1.27
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DMN3112SSS
Document number: DS31582 Rev. 1 - 2
4 of 4 www.diodes.com
October 2008
(c) Diodes Incorporated


▲Up To Search▲   

 
Price & Availability of DMN3112SSS-13

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X